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Каталог - Полевые транзисторы
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vt.rcl-radio.ru | Основные параметры полевого транзистора SML1002RCNОсновные параметры полевого транзистора SML1002RCN - Структура (технология): MOSFET
- Тип канала: N-Channel
- Максимальная рассеиваемая мощность (Pd max): 150W
- Предельно допустимое напряжение сток - исток (Uds max): 1000V
- Предельный постоянный ток стока (Id max): 5.5A
- Предельная температура p-n перехода (Tj max): 150°C
- Время включения/выключения (Fr): 28/82nS
- Входная емкость (Сiss): 1800pF
- Сопротивление перехода сток-исток в открытом состоянии (Rds): 2 Ом
- Производитель: SEMELAB
- Тип корпуса: TO254
- Найти datasheet
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MOSFET | N-Channel | 150W | 1000V | | | 4.4A | | | 4 Ом | N/A | | SDF5N100JAA |
MOSFET | N-Channel | 150W | 1000V | | | 5A | | | 2.4 Ом | N/A | | SDF5N100JAB |
MOSFET | N-Channel | 150W | 1000V | | | 5A | | | 2.4 Ом | N/A | | SDF6N90 |
MOSFET | N-Channel | 150W | 900V | | | 6A | | | 1.4 Ом | N/A | | SML1002R4CN |
MOSFET | N-Channel | 150W | 1000V | | | 5A | 28/82nS | 1800pF | 2.4 Ом | TO254 | | SML1004R2BN |
MOSFET | N-Channel | 180W | 1000V | | | 4A | 23/50nS | 950pF | 4.2 Ом | TO247 | | SML1004RBN |
MOSFET | N-Channel | 180W | 1000V | | | 4.4A | 23/50nS | 950pF | 4 Ом | TO247 | | SML100C6 |
MOSFET | N-Channel | 150W | 1000V | | | 5.5A | | 1530pF | 2 Ом | TO-254 | | SML801R4CN |
MOSFET | N-Channel | 150W | 800V | | | 6.5A | 24/78nS | 1800pF | 1.4 Ом | TO254 | | SML802R4AN |
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MOSFET | N-Channel | 125W | 800V | | | 4.5A | 20/53nS | 950pF | 2.4 Ом | TO254 | | SML802R4KN |
MOSFET | N-Channel | 125W | 800V | | | 4.7A | 20/53nS | 950pF | 2.4 Ом | TO220 | | SML802R8AN |
MOSFET | N-Channel | 150W | 800V | | | 4.5A | 20/53nS | 950pF | 2.8 Ом | TO3 | | SML802R8BN |
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MOSFET | N-Channel | 180W | 800V | | | 5A | 20/47nS | 950pF | 2.8 Ом | TO220 | | SSH4N80AS |
MOSFET | N-Channel | 140W | 800V | | | 4.5A | 56nS | 880pF | 3 Ом | TO-3P | | SSH4N90AS |
MOSFET | N-Channel | 140W | 900V | | | 4.5A | 57nS | 910pF | 3.7 Ом | TO-3P | | SSH5N80A |
MOSFET | N-Channel | 160W | 800V | | | 5A | 72nS | 1105pF | 2.2 Ом | TO-3P | | SSH5N90A |
MOSFET | N-Channel | 160W | 900V | | | 5A | 74nS | 1110pF | 2.9 Ом | TO-3P | | SSI4N80A |
MOSFET | N-Channel | 120W | 800V | | | 4A | 44nS | 700pF | 4 Ом | I2PAK | | SSI4N80AS |
MOSFET | N-Channel | 130W | 800V | | | 4.5A | 56nS | 880pF | 3 Ом | I2PAK | | SSI4N90A |
MOSFET | N-Channel | 120W | 900V | | | 4A | 48nS | 730pF | 5 Ом | I2PAK | | SSI4N90AS |
MOSFET | N-Channel | 130W | 900V | | | 4.5A | 57nS | 910pF | 3.7 Ом | I2PAK | | SSI5N80A |
MOSFET | N-Channel | 140W | 800V | | | 5A | 72nS | 1100pF | 2.2 Ом | I2PAK | | SSI5N90A |
MOSFET | N-Channel | 140W | 900V | | | 5A | 74nS | 1110pF | 2.9 Ом | I2PAK | | SSP4N80A |
MOSFET | N-Channel | 120W | 800V | | | 4A | 44nS | 700pF | 4 Ом | TO-220 | | SSP4N80AS |
MOSFET | N-Channel | 130W | 800V | | | 4.5A | 56nS | 880pF | 3 Ом | TO-220 | | SSP4N90A |
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MOSFET | N-Channel | 160W | 800V | | | 6A | 92nS | 1500pF | 2 Ом | TO-220 | | SSP6N90A |
MOSFET | N-Channel | 160W | 900V | | | 6A | 95nS | 1560pF | 2.3 Ом | TO-220 | | SSW4N80A |
MOSFET | N-Channel | 120W | 800V | | | 4A | 44nS | 700pF | 4 Ом | TO-263 | | SSW4N80AS |
MOSFET | N-Channel | 130W | 800V | | | 4.5A | 56nS | 880pF | 3 Ом | TO-263 | | SSW4N90A |
MOSFET | N-Channel | 120W | 900V | | | 4A | 48nS | 730pF | 5 Ом | TO-263 | | SSW4N90AS |
MOSFET | N-Channel | 130W | 900V | | | 4.5A | 57nS | 910pF | 3.7 Ом | TO-263 | | SSW5N80A |
MOSFET | N-Channel | 140W | 800V | | | 5A | 72nS | 1100pF | 2.2 Ом | TO-263 | | SSW5N90A |
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MOSFET | N-Channel | 125W | 800V | | | 5.5A | | | 2.000 Ом | TO-220 | | STP5N90 |
MOSFET | N-Channel | 125W | 900V | | | 5A | | | 2.400 Ом | TO-220 | | STP5NA80 |
MOSFET | N-Channel | 125W | 800V | | | 4.8A | | | 2.400 Ом | TO-220 | | STP6NA80 |
MOSFET | N-Channel | 125W | 800V | | | 5.7A | | | 1.900 Ом | TO-220 | | STV4N100 |
MOSFET | N-Channel | 125W | 1000V | | | 4A | | | 3.500 Ом | PowerSO-10 | | STV5NA80 |
MOSFET | N-Channel | 125W | 800V | | | 4.7A | | | 2.400 Ом | PowerSO-10 | |
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